Post-Doc Position – Development of a nitride-based terahertz source
Title: Development of a nitride-based terahertz source
Description: The High Frequency Investigation group of the Institute of Electronics of the South (University Montpellier 2, France) has an intense experimental and theoretical activity devoted to the study of semiconductor devices working as detectors or emitters in the terahertz frequency domain. In particular, the group is involved in the development of a novel terahertz source based on GaN structures that will be fabricated in the framework of a national network (AITHER: Amplificating Integrable TeraHertz Emitter of Radiations).
The candidate will work essentially in developing an experimental setup for the electrical and optical characterization of the nitride-based structures to investigate amplification and emission of terahertz radiation.
The candidate should have knowledge on semiconductors physics and high-level experimental knowhow in at least one of the following techniques:
- optical measurements
- microwaves equipment
- vacuum techniques
- low temperature experiments (liquid nitrogen and helium)
The candidate should provide curriculum vitae and list of publications.
Contact: Prof. L. Varani
Institut d’Electronique du Sud
Universite Montpellier 2
place E. Bataillon
34095 Montpellier Cedex 5
France
luca.varani@univ-montp2.fr
Duration: 1 year starting in 2009
Location: Institut d’Electronique du Sud (University Montpellier 2), France
Net salary: approximately 2000 eur per month
Website: www.ies.univ-montp2.fr